First 100V high pressure wafer factory’s craft of 0.35 microns
X-FAB Silicon Foundries,simulation on it is leading in industry / composite signal wafer factory and ” Surmount the Moore law ” Technical expert, has announced first 100V high pressure wafer factory’s craft of 0.35 microns of industry. It can be used in the battery to manage, offers the new typological reliable and high-performance battery controlling and protection system. It is very suitable for use in the power management apparatus, and the ultrasonic imaging used for using the piezo-electric driver and shower nozzle of the ink printer too. In addition, X-FAB has joined new developing improved Ns and P double diffused metal oxide semiconductor (DMOS) Transistor-resistor logic, for many the intersection of operation and voltage to reach 100V, on resistance reducible 45%, the position occupied of the crystal plate can be reduced by 40%, thus has reduced the cost of crystalline grain. X-FAB will provide a cost-free network lecture for the whole world on the 27 – 28 of July, will canvass these new functions, the topic of the network lecture is ” Take the place of the craft of the factory of first 0.35 microns of 100V pure wafers of industry to apply to the high-pressure installation ” .
X-FAB cheif technology officer Jens Kosch says: ” More and more popular with the regenerated energy, mixed power and motor vehicle, optoelectronic cell and wind-force turbo machine,etc. need the efficient energy memory management scheme safely. customer uses X-FAB latest professional high-pressure craft, can deal with these questions, and deal with the huge new developing apparatus of some other potentiality with lower cost. For example we find the power management solution of lithium cell is very beneath mention, the global main automakers all demonstrate the great interest. Through latest the intersection of HV and craft of X-FAB, they can realize safely high-performance the intersection of battery and control and protection system. ”
The average unit cost of every function is lower
X-FAB latest modified form Ns and P oxide thickness of DMOS transistor gate is 14 nanometers or 40 nanometers, the customer has 5V or 12V available power-handling capability according to the request of its apparatus, the operating voltage is 55V, 75V and 100V. Through reducing the on resistance by a wide margin, integrate EEPROM function to the base curve craft, repairing and program store, and use a thick metal layer as the third metal layer, X-FAB has already reduced the average unit cost of every function greatly. In addition, the apparatus of independent 5V NMOS and PMOS joined newly can be operated in 0V voltage between 100V. Other apparatuses are improved to include the Schottky (Schottky) Diode, 20V and 100V high-pressure electric capacity, and bipolar transistor.
Supply the situation
All the above-mentioned functions and apparatuses have already been regarded as 0.35 microns of high-pressure craft products (XH035) of X-FAB at present Some put out.
Tags: resistance, the driver, The semiconductor, The wafer, transistor-resistor logic
